BFP640ESD Datasheet, PDF (5/29 Pages) Infineon Technologies AG – Robust High Performance Low Noise Bipolar RF Transistor

BFP640ESD
List of Figures
List of Figures
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Total Power Dissipation P_tot = f (T_s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
BFP640ESD Testing Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Collector Current vs. Collector Emitter Voltage I_C = f (V_CE), I_B = Parameter . . . . . . . . . . . . . . . . . 18
DC Current Gain h_FE = f (I_C), V_CE = 3 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Collector Current vs. Base Emitter Voltage I_C = f (V_BE), V_CE = 2 V. . . . . . . . . . . . . . . . . . . . . . . . . 19
Base Current vs. Base Emitter Forward Voltage I_B = f (V_BE), V_CE = 2 V . . . . . . . . . . . . . . . . . . . . 19
Base Current vs. Base Emitter Reverse Voltage I_B = f (V_EB), V_CE = 2 V . . . . . . . . . . . . . . . . . . . . 20
Transition Frequency f_T = f (I_C), f = 1 GHz, V_CE = Parameter. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
3rd Order Intercept Point OIP₃ = f (I_C), Z_S = Z_L= 50 Ω, V_CE, f = Parameters. . . . . . . . . . . . . . . . . 21
Collector Base Capacitance C_CB = f (V_CB), f = 1 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Gain G_ma, G_ms, IS₂₁I² = f (f), V_CE = 3 V, I_C = 30 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Maximum Power Gain G_max = f (I_C), V_CE = 3 V, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . . 23
Maximum Power Gain G_max = f (V_CE), I_C = 30 mA, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . 23
Input Matching S₁₁ = f ( f ), V_CE = 3 V, I_C = 6 / 30 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Source Impedance for Minimum Noise Figure Z_opt = f ( f ), V_CE = 3 V, I_C = 6 / 30 mA . . . . . . . . . 24
Output Matching S₂₂ = f ( f ), V_CE = 3 V, I_C = 6 / 30 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Noise Figure NF_min = f ( f ), V_CE = 3 V, I_C = 6 / 30 mA, Z_S = Z_opt . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Noise Figure NF_min = f (I_C), V_CE = 3 V, Z_S = Z_opt, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . 26
Noise Figure NF₅₀ = f (I_C), V_CE = 3 V, Z_S = 50 Ω, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . 26
Package Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Package Foot Print . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Marking Description (Marking BFP640ESD: T4s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Tape Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Data Sheet
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Revision 1.0, 2010-06-29