BFP640ESD Datasheet, PDF (7/29 Pages) Infineon Technologies AG – Robust High Performance Low Noise Bipolar RF Transistor

Robust High Performance Low Noise Bipolar RF Transistor
BFP640ESD
1
Features
• Robust high performance low noise amplifier based on
Infineon´s reliable, high volume SiGe:C wafer technology
• 2 kV ESD robustness (HBM) due to integrated protection circuits
3
• High maximum RF input power of 21 dBm
4
2
1
• 0.65 dB minimum noise figure typical at 1.5 GHz,
0.7 dB at 2.4 GHz, 6 mA
• 26.5 dB maximum gain G_ms typical at 1.5 GHz,
23 dB at 2.4 GHz, 30 mA
• 27 dBm OIP₃ typical at 2.4 GHz, 30 mA
• Accurate SPICE GP model available to enable effective
design in process (see chapter 6)
• Easy to use, Pb- and halogen free (RoHS compliant) standard package with visible leads
Applications
As Low Noise Amplifier (LNA) in
• Mobile, portable and fixed connectivity applications: WLAN 802.11a/b/g/n, WiMax 2.5 / 3.5 / 5GHz, UWB,
Bluetooth
• Satellite communication systems: Navigation systems (GPS, Glonass), satellite radio (SDARs, DAB)
and C-band LNB
• Multimedia applications such as mobile/portable TV, CATV, FM radio
• 3G/4G UMTS/LTE mobile phone applications
• ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications.
As discrete active mixer, amplifier in VCOs and buffer amplifier
Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions
Product Name Package
BFP640ESD SOT343
Data Sheet
1=B
Pin Configuration
2=E
3=C
7
4=E
Marking
T4s
Revision 1.0, 2010-06-29