BFP640ESD Datasheet, PDF (11/29 Pages) Infineon Technologies AG – Robust High Performance Low Noise Bipolar RF Transistor

4
Thermal Characteristics
BFP640ESD
Thermal Characteristics
Table 4 Thermal Resistance
Parameter
Symbol
Values
Unit
Min.
Typ.
Max.
Junction - soldering point¹⁾ R_thJS
–
310
–
K/W
1)For calculation of R_thJA please refer to Application Note Thermal Resistance AN 077
Note / Test Condition
–
250
200
150
100
50
0
0
25
50
75
100
125
150
T_S [°C]
Figure 1 Total Power Dissipation P_tot = f (T_s)
Data Sheet
11
Revision 1.0, 2010-06-29