BFP640ESD Datasheet, PDF (18/29 Pages) Infineon Technologies AG – Robust High Performance Low Noise Bipolar RF Transistor

5.4
Characteristic DC Diagrams
BFP640ESD
Electrical Characteristics
60
50
IB=325µA
40
IB=275µA
IB=225µA
30
IB=175µA
IB=125µA
20
IB=75µA
10
IB=25µA
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
V_CE[V]
Figure 3 Collector Current vs. Collector Emitter Voltage I_C = f (V_CE), I_B = Parameter
1000
100
0.1
1
10
I_C [mA]
Figure 4 DC Current Gain h_FE = f (I_C), V_CE = 3 V
Data Sheet
18
100
Revision 1.0, 2010-06-29