BFP640ESD Datasheet, PDF (13/29 Pages) Infineon Technologies AG – Robust High Performance Low Noise Bipolar RF Transistor

BFP640ESD
5.3
Frequency Dependent AC Characteristics
Electrical Characteristics
Measurement setup is a test fixture with Bias T’s in a 50 Ω system, T_A = 25 °C
Top View
E
C
VC
Bias -T
OUT
VB
B
E
Bias-T
(Pin 1)
IN
Figure 2 BFP640ESD Testing Circuit
Table 7 AC Characteristics, V_CE = 3 V, f = 150 MHz
Parameter
Symbol
Min.
Maximum power gain
Low noise operation point
High linearity operation point
Transducer gain
G_ms
–
G_ms
–
Low noise operation point
High linearity operation point
Minimum noise figure
S₂₁
–
S₂₁
–
Minimum noise figure
Associated gain
Linearity
NF_min
–
G_ass
–
1 dB gain compression point
3rd order intercept point
OP_1dB
–
OIP₃
–
Values
Typ. Max.
34
–
39.5 –
25
–
35
–
0.6
–
30
–
11
–
25
–
Unit Note / Test Condition
dB
dB
dB
dBm
I_C = 6 mA
I_C = 30 mA
Z_S = Z_L = 50 Ω
I_C = 6 mA
I_C = 30 mA
Z_S = Z_opt
I_C = 6 mA
I_C = 6 mA
Z_S = Z_L = 50 Ω
I_C = 30 mA
I_C = 30 mA
Data Sheet
13
Revision 1.0, 2010-06-29