BFP640ESD Datasheet, PDF (22/29 Pages) Infineon Technologies AG – Robust High Performance Low Noise Bipolar RF Transistor

BFP640ESD
Electrical Characteristics
0.2
0.18
0.16
0.14
0.12
0.1
0.08
0.06
0.04
0.02
0
0 0.5 1 1.5 2 2.5 3 3.5 4
V_CB [V]
Figure 10 Collector Base Capacitance C_CB = f (V_CB), f = 1 MHz
50
45
40
35
G_ms
30
25
G
ma
20
G_ms
15
10
|S₂₁|²
5
0
0 1 2 3 4 5 6 7 8 9 10
f [GHz]
Figure 11 Gain G_ma, G_ms, IS₂₁I² = f (f), V_CE = 3 V, I_C = 30 mA
Data Sheet
22
Revision 1.0, 2010-06-29