BFP640ESD Datasheet, PDF (26/29 Pages) Infineon Technologies AG – Robust High Performance Low Noise Bipolar RF Transistor

BFP640ESD
Electrical Characteristics
4
3.5
3
2.5
2
1.5
Figure 18
1
f = 10GHz
f = 5.5GHz
f = 2.4GHz
0.5
f = 1.9GHz
f = 0.9GHz
f = 0.45GHz
0
0
10
20
30
40
50
I_c [mA]
Noise Figure NF_min = f (I_C), V_CE = 3 V, Z_S = Z_opt, f = Parameter in GHz
5
4.5
4
3.5
3
2.5
2
Figure 19
1.5
f = 10GHz
1
f = 5.5GHz
f = 2.4GHz
0.5
f = 1.9GHz
f = 0.9GHz
f = 0.45GHz
0
0
10
20
30
40
50
I_c [mA]
Noise Figure NF₅₀ = f (I_C), V_CE = 3 V, Z_S = 50 Ω, f = Parameter in GHz
Note: The curves shown in this chapter have been generated using typical devices but shall not be considered as
a guarantee that all devices have identical characteristic curves. T_A = 25°C.
Data Sheet
26
Revision 1.0, 2010-06-29