BFP640ESD Datasheet, PDF (19/29 Pages) Infineon Technologies AG – Robust High Performance Low Noise Bipolar RF Transistor

BFP640ESD
Electrical Characteristics
100
10
1
0.1
0.01
0.001
0.0001
0.00001
0.4
0.5
0.6
0.7
0.8
0.9
V_BE [V]
Figure 5 Collector Current vs. Base Emitter Voltage I_C = f (V_BE), V_CE = 2 V
1
0.1
0.01
0.001
0.0001
0.00001
0.000001
0.4
0.5
0.6
0.7
0.8
0.9
V_BE [V]
Figure 6 Base Current vs. Base Emitter Forward Voltage I_B = f (V_BE), V_CE = 2 V
Data Sheet
19
Revision 1.0, 2010-06-29