BFP640ESD Datasheet, PDF (15/29 Pages) Infineon Technologies AG – Robust High Performance Low Noise Bipolar RF Transistor

BFP640ESD
Electrical Characteristics
Table 10 AC Characteristics, V_CE = 3 V, f = 1.5 GHz
Parameter
Symbol
Min.
Maximum power gain
Low noise operation point
High linearity operation point
Transducer gain
G_ms
–
G_ms
–
Low noise operation point
High linearity operation point
Minimum noise figure
S₂₁
–
S₂₁
–
Minimum noise figure
Associated gain
Linearity
NF_min
–
G_ass
–
1 dB gain compression point
3rd order intercept point
OP_1dB
–
OIP₃
–
Values
Typ. Max.
23.5 –
26.5 –
21
–
24
–
0.65 –
23.5 –
12
–
26.5 –
Unit Note / Test Condition
dB
dB
dB
dBm
I_C = 6 mA
I_C = 30 mA
Z_S = Z_L = 50 Ω
I_C = 6 mA
I_C = 30 mA
Z_S = Z_opt
I_C = 6 mA
I_C = 6 mA
Z_S = Z_L = 50 Ω
I_C = 30 mA
I_C = 30 mA
Table 11 AC Characteristics, V_CE = 3 V, f = 1.9 GHz
Parameter
Symbol
Min.
Maximum power gain
Low noise operation point
High linearity operation point
Transducer gain
G_ms
–
G_ms
–
Low noise operation point
High linearity operation point
Minimum noise figure
S₂₁
–
S₂₁
–
Minimum noise figure
Associated gain
Linearity
NF_min
–
G_ass
–
1 dB gain compression point
3rd order intercept point
OP_1dB
–
OIP₃
–
Values
Typ. Max.
22.5 –
25
–
19.5 –
22
–
0.65 –
22
–
12
–
27
–
Unit Note / Test Condition
dB
dB
dB
dBm
I_C = 6 mA
I_C = 30 mA
Z_S = Z_L = 50 Ω
I_C = 6 mA
I_C = 30 mA
Z_S = Z_opt
I_C = 6 mA
I_C = 6 mA
Z_S = Z_L = 50 Ω
I_C = 30 mA
I_C = 30 mA
Data Sheet
15
Revision 1.0, 2010-06-29