PTFB212507SH Datasheet, PDF (7/13 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2110 – 2170 MHz

PTFB212507SH
Reference Circuit
C802
S2
1000 pF
C801
1000 pF
8
In
1
Out
NC
NC
4
2 36
75
V^DD
C803
1000 pF
R801
1200 Ohm
R802
1300 Ohm
R803
100 Ohm
S1
2C
1
4
B
S
3E
S3
R804
10 Ohm
R101
10 Ohm
3
TL122
TL131
RF_IN
Hr = 3.66
H = 20 mil
RO/RO4350B1
TL109 TL123 TL111
TL105
2
TL126 ³
1
TL121
2
TL127 3
1
C102
10 pF
TL120
TL103
TL102
2
TL128 3
1
TL119
TL108
TL114
R103
10 Ohm
C103
4700000 pF
TL118 TL124
1
2
3
C105
10 pF
TL113 TL106
TL129
R104
10 Ohm
TL115
TL104
1
2
3
C101
2.1 pF
C106
4700000 pF
TL101
TL130 2
1
3
4
R102
10 Ohm
C104
10 pF
TL116
TL125
3

2
1
TL110
TL112 TL107
TL117
GATE DUT
(Pin G)
Reference circuit input schematic for ƒ = 2170 MHz
DUT
(Pin V)
C204
10000000 pF
TL222
TL217
TL201 TL227 TL225
TL224
1
2
3
1
2
3
C211
2200000 pF
C207
1000000 pF
TL220
3
TL226
TL232
TL223
1
2
1
2
1
2
3
3
C212
C209
V^DD
220000000 pF
10000000 pF
Hr = 3.66
H = 20 mil
RO/RO4350B1
DRAIN_DUT
(Pin D)
TL208
1
TL204 3
2
C203
1.9 pF
TL212
TL203 2
1
3
TL205
4
2
TL207 3
1
C202
1.9 pF
TL215
TL209 TL213
C201
10 pF
TL214 TL210 TL211
RF_OUT
TL206
C210
2200000 pF
C206
1000000 pF
C208
10000000 pF
TL221
DUT
(Pin V)
TL216 TL202 TL219 TL231
3
2
1
TL230
3
2
1
TL218
2
1
3
C205
10000000 pF
TL228
TL233
1
2
3
C213
220000000 pF
TL229
3
b212507sh_bdout_05-15-2012
2
1
V^DD
Reference circuit output schematic for ƒ = 2170 MHz
Data Sheet
7 of 13
Rev. 03, 2015-10-30