PTFB212507SH Datasheet, PDF (5/13 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2110 – 2170 MHz

PTFB212507SH
Typical Performance (cont.)
Two-tone Drive-up
V_DD = 28 V, I_DQ = 1.6 A,
ƒ₁ = 2170 MHz, ƒ₂ = 2169 MHz
20
50
19
40
Gain
18
30
17
20
16
10
Efficiency
15
0
37 39 41 43 45 47 49 51 53
Output Power, PEP (dBm)
Two-tone Drive-up
V_DD = 28 V, I_DQ = 1.6 A,
ƒ₁ = 2170 MHz, ƒ₂ = 2169 MHz
-15
50
-25
40
-35
IMD3
30
-45
20
-55
10
Efficiency
-65
0
37 39 41 43 45 47 49 51 53 55
Output Power, PEP (dBm)
Two-tone Drive-up at
Selected Frequencies
V_DD = 28 V, I_DQ = 1.6 A, Tone Spacing = 1 MHz
-20
-30
-40
-50
-60
-70
35
2110 MHz
2140 MHz
2170 MHz
40
45
50
55
Output Power, PEP (dBm)
Two-tone Broadband Performance
V_DD = 28 V, I_DQ = 1.6 A, P_OUT = 89 W
60
55
50
45
40
35
30
25
20
15
2040
RL
Efficiency
IMD3
Gain
2080 2120 2160 2200
Frequency (MHz)
-5
-10
-15
-20
-25
-30
-35
-40
-45
-50
2240
Data Sheet
5 of 13
Rev. 03, 2015-10-30