PTFB212507SH Datasheet, PDF (1/13 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2110 – 2170 MHz

PTFB212507SH
Thermally-Enhanced High Power RF LDMOS FET
200 W, 28 V, 2110 – 2170 MHz
Description
The PTFB212507SH is a 200-watt LDMOS FET intended for use
in multi-standard cellular power amplifier applications in the 2110
to 2170 MHz frequency band. Features include input and output
matching, high gain and thermally-enhanced package with earless
flange. Manufactured with Infineon's advanced LDMOS process, this
device provides excellent thermal performance and superior reliability.
PTFB212507SH
Package H-37288G-4/2
Single-carrier WCDMA, 3GPP Drive-up
V_DD = 28 V, I_DQ = 1.6 A, ƒ = 2170 MHz
3GPP WCDMA, PAR = 7.5 dB, BW 3.84 MHz
-15
45
-20
IMD Low
40
-25
IMD Up
35
-30
Efficiency
30
-35
25
-40
20
-45
15
-50
10
-55
5
-60
0
34 36 38 40 42 44 46 48 50 52
Output Power (dBm)
Features
• Broadband internal matching
• Wide video bandwidth
• Typical two-carrier WCDMA performance,
2170 MHz, 28 V, 3GPP signal, PAR = 8 dB,
10 MHz carrier spacing
- Average output power = 40 W
- Linear gain = 18 dB
- Efficiency = 27%
- Intermodulation distortion = –35 dBc
- Adjacent channel power= –39 dBc
• Typical CW performance, 2170 MHz, 28 V
- Output power at P_1dB = 200 W
- Efficiency = 52%
- Gain = 17 dB
• Capable of handling 10:1 VSWR @28 V, 200 W
(CW) output power
• Integrated ESD protection
• Low thermal resistance
• Pb-free and RoHS compliant
RF Characteristics
Single-carrier WCDMA Specifications (tested in Infineon test fixture)
V_DD = 30 V, I_DQ = 1850 mA, P_OUT = 50 W avg, ƒ = 2170 MHz. 3GPP signal, 3.84 MHz channel bandwidth,
10 dB peak/average @ 0.01% CCDF
Characteristic
Linear Gain
Drain Efficiency
Adjacent Channel Power Ratio
Symbol
G_ps
η_D
ACPR
Min
16.75
25
—
Typ
18
27.5
–36.5
Max
19
—
–32
Unit
dB
%
dBc
All published data at T_CASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 13
Rev. 03, 2015-10-30