PTFB212507SH Datasheet, PDF (3/13 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2110 – 2170 MHz

PTFB212507SH
Typical Performance (data taken in a production test fixture)
Two-carrier WCDMA 3GPP
V_DD = 28 V, I_DQ = 1.6 A, ƒ = 2170 MHz
3GPP WCDMA, PAR = 8 dB,
10 MHz carrier spacing, BW 3.84 MHz
20
50
19
40
Gain
18
30
17
20
Efficiency
16
10
15
0
34 36 38 40 42 44 46 48 50 52
Output Power (dBm)
Two-carrier WCDMA 3GPP Drive-up
V_DD = 28 V, I_DQ = 1.6 A, 3GPP WCDMA,
PAR = 8 dB, 10 MHz carrier spacing,
BW 3.84 MHz
-20
2110 Lower
2110 Upper
-25
2140 Lower
2140 Upper
-30
2170 Lower
2170 Upper
-35
-40
-45
-50
-55
34 36 38 40 42 44 46 48 50 52
Output Power (dBm)
Two-carrier WCDMA 3GPP Drive-up
V_DD = 28 V, I_DQ = 1.6 A, ƒ = 2170 MHz,
3GPP WCDMA, PAR = 8 dB,
10 MHz carrier spacing, BW 3.84 MHz
-15
45
-20
IMD Low
40
IMD Up
-25
35
ACPR
-30
30
Efficiency
-35
25
-40
20
-45
15
-50
10
-55
5
-60
0
34 36 38 40 42 44 46 48 50 52
Output Power (dBm)
Single-carrier WCDMA,
3GPP Broadband
V_DD = 28 V, I_DQ = 1.6 A, P_OUT = 63 W
60
0
RL
50
-10
40
Efficiency
-20
30
-30
IMD
20
-40
Gain
10
-50
2040 2070 2100 2130 2160 2190 2220
Frequency (MHz)
Data Sheet
3 of 13
Rev. 03, 2015-10-30