PTFB212507SH Datasheet, PDF (4/13 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2110 – 2170 MHz

Typical Performance (cont.)
Power Sweep, CW
Gain & Efficiency vs. Output Power
V_DD = 28 V, I_DQ = 1.6 A, ƒ = 2170 MHz
19
60
18
Gain
50
40
17
30
16
20
Efficiency
15
10
14
0
37 39 41 43 45 47 49 51 53 55
Output Power (dBm)
PTFB212507SH
Power Sweep, CW
Gain & Efficiency vs. Output Power
V_DD = 28 V, I_DQ = 1.6 A, ƒ = 2170 MHz
Gain -10°C
Gain +25°C
21
Gain +85°c
60
Efficiency -10°C
20
Efficiency +25°C
50
Efficiency +85°C
19
40
18
30
17
20
16
10
15
35
0
40
45
50
55
Output Power (dBm)
CW Performance
Gain vs. Output Power
V_DD = 28 V, ƒ = 2170 MHz
20
I_DQ = 2.187 A
19
18 _{IDQ = 1.62 A}
17 I_DQ = 1.05 A
16
15
35
40
45
50
55
Output Power (dBm)
Two-tone Intermodulation Distortion
vs. Output Power
V_DD = 28 V_, I_DQ = 1.6 A,
ƒ₁ = 2170 MHz, ƒ₂ = 2169 MHz
-20
-30
3rd Order
-40
-50
5th
-60
7th
-70
-80
35
40
45
50
55
Output Power, PEP (dBm)
Data Sheet
4 of 13
Rev. 03, 2015-10-30