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| PTFB212507SH Datasheet, PDF (10/13 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2110 – 2170 MHz | |||
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Reference Circuit (cont.)
RO4350, .020
(60)
R803 C802
C801
S3
R101
R804
R801
C803
R802
S1
S2
R103
C105
C103
R104
RF_IN
C102
C101
C106
C104
R102
PTFB212507_IN_02
Reference circuit assembly diagram (not to scale)
PTFB212507SH
RO4350, .020
(60)
C204
C207
C211
C203
C212
10 μF
C209
C201
RF_OUT
C202
C210
C206
C213
C208
C205
PTFB212507_OUT_02
ï¢ï²ï±ï²ïµï°ï·ï³ï¨ïïïïï°ïµïï±ïµïï²ï°ï±ï²
Data Sheet
10 of 13
Rev. 03, 2015-10-30
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