PTFB212507SH Datasheet, PDF (11/13 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2110 – 2170 MHz

Reference Circuit (cont.)
Components Information
Component
Description
Input
C101
Chip capacitor, 2.1 pF
C102
C103, C106
C104, C105
Chip capacitor, 10 pF
Chip capacitor, 4.7 µF
Chip capacitor, 10 pF
C801, C802, C803
R101, R103, R804
Capacitor, 1000 pF
Resistor, 10 Ohm
R102, R104
R801
R802
Resistor, 10 Ohm
Resistor, 1200 Ohm
Resistor, 1300 Ohm
R803
S1
S2
Resistor, 100 Ohm
Transistor
Voltage Regulator
S3
Potentiometer, 2k ohm
Output
C201
C202, C203
C204, C205
C206, C207
C208, C209
C210, C211
C212, C213
Chip capacitor, 10 pF
Chip capacitor, 1.9 pF
Capacitor, 10 µF
Chip capacitor, 1 µF
Capacitor, 10 µF
Chip capacitor, 2.2 µF
Capacitor, 220 µF
Supplier
ATC
ATC
Digi-Key
ATC
Digi-Key
Digi-Key
Digi-Key
Digi-Key
Digi-Key
Digi-Key
Digi-Key
Digi-Key
Digi-Key
ATC
ATC
Digi-Key
Digi-Key
Digi-Key
Digi-Key
Digi-Key
PTFB212507SH
P/N
ATC100B2R1CW500XB
ATC100B100CW500XB
493-2372-2-ND
ATC100A100JW500XB
PCC1772CT-ND
P10ECT-ND
P10GCT-ND
P1.2KGCT-ND
P1.3KGCT-ND
P101ECT-ND
BCP56
LM78L05ACM-ND
3224W-202ECT-ND
ATC100A100GW150XB
ATC100B1R9CW500XB
587-1818-2-ND
445-1411-2-ND
281M5002106K
445-1447-2-ND
PCE4444TR-ND
Data Sheet
11 of 13
Rev. 03, 2015-10-30