PTFB212507SH Datasheet, PDF (12/13 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2110 – 2170 MHz

PTFB212507SH
Package Outline Specifications
Package H-37288G-4/2 with Formed Leads
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Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm, alternate dimensions are inches.
3. All tolerances ±0.127 [0.005]
4. Pins: D – drain; G – gate; S – source (flange); V – V_DD.
5. Lead thickness: 0.10 + 0.051/–0.025 mm [.004 +0.002/–0.001 inch].
6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch] max.
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
Data Sheet
12 of 13
Rev. 03, 2015-10-30