PTFB212507SH Datasheet, PDF (2/13 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2110 – 2170 MHz

PTFB212507SH
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
Gate Leakage Current
On-State Resistance
Operating Gate Voltage
Conditions
V_GS = 0 V, I_DS = 10 mA
V_DS = 28 V, V_GS = 0 V
V_DS = 63 V, V_GS = 0 V
V_GS = 12 V, V_DS = 0 V
V_GS = 10 V, V_DS = 0.1 V
V_DS = 28 V, I_DQ = 1.6 A
Symbol
V(_BR)DSS
I_DSS
I_DSS
I_GSS
R_DS(on)
V_GS
Min
65
—
—
—
—
—
Typ
—
—
—
—
0.05
2.85
Max
—
0.1
1.0
1
—
—
Unit
V
µA
µA
µA
Ω
V
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Storage Temperature Range
Thermal Resistance (T_CASE = 70°C, 30 V V_DD, 200 W CW)
Symbol
V_DSS
V_GS
T_J
T_STG
R_θJC
Value
65
–6 to +10
200
–40 to +150
0.26
Unit
V
V
°C
°C
°C/W
Ordering Information
Type and Version
PTFB212507SH V2 R2
Order Code
PTFB212507SHV2R2XTMA1
Package and Description
H-37288G-4/2, ceramic open-cavity,
formed leads
Shipping
Tape & Reel, 250 pcs
Data Sheet
2 of 13
Rev. 03, 2015-10-30