PTFB212507SH Datasheet, PDF (6/13 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2110 – 2170 MHz

Broadband Circuit Impedance
Frequency
MHz
2080
2110
2140
2170
2200
Z Source 
R
jX
2.89
–6.50
2.74
–6.29
5.61
–6.09
2.48
–5.89
2.37
–5.70
Z Load 
R
jX
1.58
–4.39
1.55
–4.29
1.52
–4.20
1.49
–4.11
1.45
–4.02
See next page for reference circuit information
PTFB212507SH
Z Source
D
Z Load
G
S
Data Sheet
6 of 13
Rev. 03, 2015-10-30