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HYS64D16301HU-5-C Datasheet, PDF (20/35 Pages) Infineon Technologies AG – 184-Pin Unbuffered Dual-In-Line Memory Modules
Table 9 IDD Specification (PC2700, –6)
HYS[64/72]D[16x01/32x00/64x20]HU-[5/6]-C
Unbuffered DDR SDRAM Modules
Electrical Characteristics
Unit Note 1)2)
128MB
256MB
256MB
512MB
512MB
× 64
× 64
× 72
× 64
× 72
1 Rank
1 Rank
1 Rank
2 Ranks
2 Ranks
–6
–6
–6
–6
–6
Symbol typ. max. typ. max. typ. max. typ. max. typ. max.
IDD0
IDD1
IDD2P
IDD2F
IDD2Q
IDD3P
IDD3N
IDD4R
IDD4W
IDD5
IDD6
IDD7
260 300 480 600 540 675 736 904 828 1017 mA 3)
320 380 560 680 630 765 816 984 918 1107 mA 3)4)
14 18 28 36 31.5 40.5 56 72 63 81 mA 5)
100 340 200 240 225 270 400 480 450 540 mA 5)
68 96 136 192 153 216 272 384 306 432 mA 5)
44 60 88 120 99 135 176 240 198 270 mA 5)
136 160 256 304 288 342 512 608 576 684 mA 5)
340 400 560 680 630 765 816 984 918 1107 mA 3)4)
360 440 600 720 675 810 856 1024 963 1152 mA 3)
540 640 1080 1280 1215 1440 1336 1584 1503 1782 mA 3)
5.6 11.2 11.2 22.4 12.6 25.2 44.8 22.4 25.2 25.2 mA 5)
820 960 1440 1720 1620 1935 1696 2024 1908 2277 mA 3)4)
1) Module IDD values are calculated on the basis of component IDD and can be measured differently according to DQ loading
capacity.
2) Test condition for maximum values: VDD = 2.7 V, TA = 10 °C
3) The module IDDx values are calculated from the IDDx values of the component data sheet as follows:
m × IDDx[component] + n × IDD3N[component] with m and n number of components of rank 1 and 2; n=0 for 1 rank modules
4) DQ I/O (IDDQ) currents are not included in the calculations (see note 1)
5) The module IDDx values are calculated from the corrponent IDDx data sheet values as: (m + n) × IDDx[component]
Data Sheet
20
V1.0, 2003-07