HYS64D16301HU-5-C Datasheet, PDF (18/35 Pages) Infineon Technologies AG – 184-Pin Unbuffered Dual-In-Line Memory Modules

HYS[64/72]D[16x01/32x00/64x20]HU-[5/6]-C
Unbuffered DDR SDRAM Modules
Electrical Characteristics
Table 7 Electrical Characteristics and DC Operating Conditions (cont’d)
Parameter
Symbol
Values
Unit Note/Test Condition ¹⁾
Min.
Typ.
Max.
VI-Matching Pull-up
Current to Pull-down
Current
VI_Ratio 0.71
1.4
— ⁷⁾
Input Leakage Current
I_I
–2
2
µA Any input 0 V ≤V_IN ≤V_DD;
All other pins not under test
= 0 V ⁸⁾⁹⁾
Output Leakage Current I_OZ
–5
Output High Current,
I_OH
—
Normal Strength Driver
5
–16.2
µA DQs are disabled;
0 V ≤V_OUT ≤V_DDQ ⁸⁾
mA V_OUT = _{1.95 V} ⁸⁾
Output Low
I_OL
16.2
Current, Normal Strength
Driver
—
mA V_OUT = 0.35 V ⁸⁾
1) 0 ° C ≤T_A ≤70 ° C
2) DDR400 conditions apply for all clock frequencies above 166 MHz
3) Under all conditions, V_DDQ must be less than or equal to V_DD.
4) Peak to peak AC noise on V_REF may not exceed ± 2% V_{REF (DC)}. V_REF is also expected to track noise variations in V_DDQ.
5) V_TT is not applied directly to the device. V_TT is a system supply for signal termination resistors, is expected to be set equal
to V_REF, and must track variations in the DC level of V_REF.
6) V_ID is the magnitude of the difference between the input level on CK and the input level on CK.
7) The ration of the pull-up current to the pull-down current is specified for the same temperature and voltage, over the entire
temperature and voltage range, for device drain to source voltage from 0.25 to 1.0 V. For a given output, it represents the
maximum difference between pull-up and pull-down drivers due to process variation.
8) Inputs are not recognized as valid until V_REF stabilizes.
9) Values are shown per DDR SDRAM component
Data Sheet
18
V1.0, 2003-07