HYB39S256400D Datasheet, PDF (20/28 Pages) Infineon Technologies AG – 256-MBit Synchronous DRAM

HYB39S256[40/80/16]0D[C/T](L)
256-MBit Synchronous DRAM
Electrical Characteristics
4
Electrical Characteristics
4.1
Operating Conditions
Table 10 Absolute Maximum Ratings
Parameter
Symbol
Input / Output voltage relative to V_SS
Voltage on V_DD supply relative to V_SS
Voltage on V_DDQ supply relative to V_SS
Operating Temperature
Storage temperature range
Power dissipation per SDRAM component
Data out current (short circuit)
V_IN, V_OUT
V_DD
V_DDQ
T_A
T_STG
P_D
I_OUT
Limit Values
min.
max.
– 1.0
+4.6
– 1.0
+4.6
– 1.0
+4.6
0
+70
-55
+150
–
1
–
50
Unit Note/
Test Condition
V
–
V
–
V
–
ο_C
–
o_C
–
W
–
mA –
Attention: Permanent device damage may occur if “Absolute Maximum Ratings” are exceeded.Functional
operation should be restricted to recommended operation conditions. Exposure to higher than
recommended voltage for extended periods of time affect device reliability
Table 11 DC Characteristics¹⁾
Parameter
Symbol
Values
min.
max.
Unit Note/
Test Condition
Supply Voltage
I/O Supply Voltage
Input high voltage
Input low voltage
Output high voltage (I_OUT = – 4.0 mA)
Output low voltage (I_OUT = 4.0 mA)
V_DD
V_DDQ
V_IH
V_IL
V_OH
V_OL
3.0
3.6
V
2)
3.0
3.6
V
2)
2.0
V_DDQ+0.3 V
2)3)
– 0.3
+0.8
V
2)3)
2.4
–
V
2)
–
0.4
V
2)
Input leakage current, any input
I_IL
(0 V < V_IN < V_DD, all other inputs = 0 V)
Output leakage current
I_OL
(DQs are disabled, 0 V < V_OUT < V_DDQ)
–5
+5
–5
+5
mA –
mA –
1) T_A = 0 to 70 ^οC
2) All voltages are referenced to V_SS
3) V_IH may overshoot to V_DDQ + 2.0 V for pulse width of < 4ns with 3.3V. V_IL may undershoot to -2.0 V for pulse width < 4.0 ns
with 3.3V. Pulse width measured at 50% points with amplitude measured peak to DC reference.
Data Sheet
20
Rev. 1.02, 2004-02
10072003-13LE-FGQQ