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HYS72D32500GR Datasheet, PDF (19/39 Pages) Infineon Technologies AG – Registered DDR SDRAM-Modules
HYS72D[128/64/32]5[00/20/21]GR–[7F/7/8]-B
Registered DDR SDRAM-Modules
Electrical Characteristics
Table 12 AC Timing - Absolute Specifications –8/–7/-7F
Parameter
Symbol
–8
–7
DDR200
DDR266A
Min. Max. Min. Max.
Address and control input setup tIS
time
1.1 —
0.9 —
1.1 —
1.0 —
–7F
DDR266F
Min. Max.
0.9 —
1.0 —
Unit Note/
Test
Condition 1)
ns fast slew rate
3)4)5)6)10)
ns slow slew rate
3)4)5)6)10)
Address and control input hold tIH
time
1.1 —
1.1 —
0.9 —
1.0 —
0.9 —
1.0 —
ns fast slew rate
3)4)5)6)10)
ns slow slew rate
3)4)5)6)10)
Read preamble
Read preamble setup time
Read postamble
Active to Precharge command
Active to Active/Auto-refresh
command period
tRPRE
tRPRES
tRPST
tRAS
tRC
Auto-refresh to Active/Auto-
tRFC
refresh command period
Active to Read or Write delay tRCD
Precharge command period tRP
Active to Autoprecharge delay tRAP
Active bank A to Active bank B tRRD
command
Write recovery time
tWR
Auto precharge write recovery + tDAL
precharge time
Internal write to read command tWTR
delay
Exit self-refresh to non-read
command
tXSNR
Exit self-refresh to read
command
tXSRD
Average Periodic Refresh
tREFI
Interval
0.9 1.1
0.9
1.5 —
NA
0.40 0.60 0.40
50 120E+3 45
70 —
65
1.1
0.9 1.1
tCK
NA —
tCK
0.60 0.40 0.60 ns
120E+3 45
—
65
120E+3 tCK
—
ns
80 —
75 —
75 —
ns
20 —
20 —
20 —
ns
20 —
20 —
20 —
ns
20 —
20 —
20 —
ns
15 —
15 —
15 —
ns
15 —
15 —
15 —
ns
(twr/tCK) + (trp/tCK)
tCK
1—
1
—
1—
tCK
80 —
75 —
75 —
ns
200 —
200 —
200 —
tCK
— 7.8
— 7.8
— 7.8
µs
CL > 1.5 2)3)4)5)
2)3)4)5)11)
2)3)4)5)
2)3)4)5)
2)3)4)5)
2)3)4)5)
2)3)4)5)
2)3)4)5)
2)3)4)5)
2)3)4)5)
2)3)4)5)
2)3)4)5)12)
CL > 1.5 2)3)4)5)
2)3)4)5)
2)3)4)5)
2)3)4)5)13)
1) 0 °C ≤ TA ≤ 70 °C; VDDQ = 2.5 V ± 0.2 V, VDD = +2.5 V ± 0.2 V
2) Input slew rate ≥ 1 V/ns for DDR266a, DDR266F and = 1 V/ns for DDR200
3) The CK/CK input reference level (for timing reference to CK/CK) is the point at which CK and CK cross: the input reference
level for signals other than CK/CK, is VREF. CK/CK slew rate are ≥ 1.0 V/ns.
4) Inputs are not recognized as valid until VREF stabilizes.
5) The Output timing reference level, as measured at the timing reference point indicated in AC Characteristics (note 3) is VTT.
6) These parameters guarantee device timing, but they are not necessarily tested on each device.
7) tHZ and tLZ transitions occur in the same access time windows as valid data transitions. These parameters are not referred
to a specific voltage level, but specify when the device is no longer driving (HZ), or begins driving (LZ).
Data Sheet
19
Rev. 1.03 2004-01