HYS72D32500GR Datasheet, PDF (17/39 Pages) Infineon Technologies AG – Registered DDR SDRAM-Modules

Table 11 I_DD Specifications –8
HYS72D[128/64/32]5[00/20/21]GR–[7F/7/8]-B
Registered DDR SDRAM-Modules
Electrical Characteristics
Unit Note/ Test
Conditions⁵⁾
256 MB
512 MB
1 GByte
×72
×72
×72
1 Rank
1 Rank
2 Ranks
–8
–8
–8
max.
max.
max.
I_DD0
I_DD1
I_DD2P
I_DD2F
I_DD2Q
I_DD3P
I_DD3N
I_DD4R
I_DD4W
I_DD5
I_DD6
I_DD7
810
900
63
315
198
144
405
855
945
1530
22,5
1890
1620
1800
126
630
396
288
810
1710
1890
3060
45
3780
2430
2610
252
1260
792
576
1620
2520
2700
3870
90
4590
mA
1)4)
mA
1)3)4)
mA
2)4)
mA
2)4)
mA
2)4)
mA
2)4)
mA
2)4)
mA
1)3)4)
mA
1)4)
mA
1)4)
mA
2)4)
mA
1)3)4)5)
1) The module I_DD values are calculated from the component I_DD datasheet values are:
n * I_DD×[component] for single bank modules (n: number of components per module bank)
n * I_DD×[component] + n * I_DD3N[component] for two bank modules (n: number of components per module bank)
2) The module I_DD values are calculated from the component I_DD datasheet values are:
n * I_DD×[component] for single bank modules (n: number of components per module bank)
2 * n * I_DD×[component] for single two bank modules (n: number of components per module bank)
3) DQ I/O (I_DDQ) currents are not included into calculations: module I_DD values will be measured differently depending on load
conditions
4) DRAM component currents only: module I_DD will be measured differently depending upon register and PLL operation
currents
5) Test condition for maximum values: V_DD = 2.7 V, T_A = 10 °C
Data Sheet
17
Rev. 1.03 2004-01