HYB39S256400DT Datasheet, PDF (16/22 Pages) Infineon Technologies AG – 256 MBit Synchronous DRAM

HYB39S256400/800/160DT(L)/DC(L)
256MBit Synchronous DRAM
Absolute Maximum Ratings
Parameter
Symbol
Limit Values
Unit
min.
max.
Input / Output voltage relative to V_SS
V_IN, V_OUT
– 1.0
4.6 V
Power supply voltage
Operating Temperature
Storage temperature range
V_DD,V_DDQ
T_A
T_STG
– 1.0
0
-55
4.6 V
+70 ^oC
+150 ^oC
Power dissipation per SDRAM component
P_D
–
1
W
Data out current (short circuit)
I_OS
–
50 mA
Permanent device damage may occur if “Absolute Maximum Ratings” are exceeded.
Functional operation should be restricted to recommended operation conditions.
Exposure to higher than recommended voltage for extended periods of time affect device reliability
Recommended Operation Conditions and DC Eletrical Characteristics
T_A = 0 to 70 ^oC;
Parameter
Symbol
Limit Values
Unit Notes
min.
typ.
max.
Supply Voltage
V_DD,V_DDQ 3.0
3.3
3.6
V1
Input high voltage
V_IH
2.0
3.0 V_DDQ+0.3 V 1, 2
Input low voltage
V_IL
– 0.3
0
0.8
V 1, 2
Output high voltage (I_OUT = – 4.0 mA) V_OH
2.4
–
–
V1
Output low voltage (I_OUT = 4.0 mA) V_OL
–
–
0.4
V1
Input leakage current, any input I_IL
(0 V < V_IN < V_DD, all other inputs = 0 V)
–5
–
5
mA
Output leakage current
I_OL
(DQs are disabled, 0 V < V_OUT < V_DDQ)
–5
–
5
mA
Notes:
1. All voltages are referenced to V_SS.
2. Vih may overshoot to V_DDQ + 2.0 V for pulse width of < 4ns with 3.3V. Vil may undershoot to -2.0 V for pulse
width < 4.0 ns with 3.3V. Pulse width measured at 50% points with amplitude measured peak to DC
reference.
INFINEON Technologies
16
2002-04-23