ICS814S208I Datasheet, PDF (7/23 Pages) Integrated Device Technology – FemtoClock® Crystal-to-LVDS 8-Output Clock Synthesizer

ICS814S208I Data Sheet
FEMTOCLOCK^® CRYSTAL-TO-LVDS 8-OUTPUT CLOCK SYNTHESIZER
Table 4B. LVCMOS/LVTTL DC Characteristics, V_DD = 3.3V±5%, V_DDOL = 1.8V±0.2V, 2.5V±5% or 3.3V±5%,
T_A = -40°C to 85°C
Symbol Parameter
Test Conditions
Minimum Typical Maximum
V_IH
Input High Voltage
V_DD = 3.3V
2.2
V_IL
Input Low Voltage
V_DD = 3.3V
-0.3
I_IH
Input
BW[1:0], BYPASS, nOE_A,
High Current nOE_B[2:0], REF_SEL, N_SEL
V_DD = V_IN = 3.465V
V_DD + 0.3
0.8
150
I_IL
Input
BW[1:0], BYPASS, nOE_A,
Low Current nOE_B[2:0], REF_SEL, N_SEL
V_DD = 3.465V,
V_IN = 0V
-10
V_OH
Output
High Voltage
QLOCK
V_DDOL = 3.465V, I_OH = -8mA
2.6
V_DDOL = 2.625V, I_OH = -8mA
1.8
V_DDOL = 2V, I_OH = -8mA
1.5
V_OL
Output
Low Voltage
QLOCK
V_DDOL = 3.465V or 2.625V,
I_OL = 8mA
0.5
V_DDOL = 2V, I_OL = 8mA
0.4
Units
V
V
µA
µA
V
V
V
V
V
Table 4C. Differential DC Characteristics, V_DD = 3.3V ± 5%, T_A = -40°C to 85°C
Symbol Parameter
Test Conditions
Minimum
Typical
Maximum
REF_CLK,
I_IH
Input High Current
nREF_CLK
V_DD = V_IN = 3.465V
150
REF_CLK
I_IL
Input Low Current
nREF_CLK
V_DD = 3.465V, V_IN = 0V
V_DD = 3.465V, V_IN = 0V
-10
-150
V_PP
Peak-to-Peak Voltage
0.15
1.0
V_CMR
Common Mode Input Voltage; NOTE 1
GND + 1.2
V_DD
NOTE 1: Common mode input voltage is defined as V_IH.
Table 4D. LVDS DC Characteristics, V_DD = 3.3V±5%, T_A = -40°C to 85°C
Symbol Parameter
Test Conditions
Minimum Typical Maximum
V_OD
∆V_OD
V_OS
∆V_OS
Differential Output Voltage
V_OD Magnitude Change
Offset Voltage
V_OS Magnitude Change
247
1.125
454
50
1.375
50
Units
µA
µA
µA
V
V
Units
mV
mV
V
mV
Table 5. Crystal Characteristics
Parameter
Mode of Oscillation
Frequency
Equivalent Series Resistance (ESR)
Shunt Capacitance
Drive Level; NOTE 1
Test Conditions
NOTE 1: Using typical crystal parameter for ESR, C_O, and C_L in a 30.72MHz crystal.
ICS814S208BKILF REVISION B OCTOBER 13, 2011
7
Minimum Typical Maximum
Fundamental
28.5
30.72
32
80
7
100
Units
MHz
Ω
pF
µW
©2011 Integrated Device Technology, Inc.