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ICS9P935 Datasheet, PDF (6/13 Pages) Integrated Device Technology – DDR I/DDR II Phase Lock Loop Zero Delay Buffer
ICS9P935
DDR I/DDR II Phase Lock Loop Zero Delay Buffer
Electrical Characteristics - Input/Supply/Common Output Parameters
TA = 0 - 70°C; Supply Voltage AVDD, VDD = 2.5V ± 0.2V
PARAMETER
SYMBOL
CONDITIONS
Input High Current
Input Low Current
Operating Supply
Current
Output High Current
IIH
IIL
IDD2.5
IDDPD
IOH
VI = VDD or GND
VI = VDD or GND
CL = 0pf @ 200MHz
CL = 0pf
VDD = 2.3V, VOUT = 1V
Output Low Current
IOL VDD = 2.3V, VOUT = 1.2V
High Impedance
Output Current
IOZ VDD=2.7V, Vout=VDD or GND
Input Clamp Voltage
VIK VDDQ = 2.3V Iin = -18mA
High-level output
voltage
Low-level output voltage
Input Capacitance1
Output Capacitance1
VOH
VOL
CIN
COUT
VDD = min to max,
IOH = -1 mA
VDDQ = 2.3V,
IOH = -12 mA
VDD = min to max
IOL=1 mA
VDDQ = 2.3V
IOH=12 mA
VI = GND or VDD
VOUT = GND or VDD
MIN
5
-18
26
VDDQ - 0.1
1.7
TYP
250
-32
35
3
3
MAX
5
100
±10
-1.2
UNITS
µA
µA
mA
µA
mA
mA
mA
V
V
V
0.1
V
0.6
V
pF
pF
IDTTM/ICSTM DDR I/DDR II Phase Lock Loop Zero Delay Buffer
6
ICS9P935 REV H 12/1/08