IC42S16160 Datasheet, PDF (6/69 Pages) Integrated Circuit Solution Inc – 4M x 16Bit x 4 Banks (256-MBIT) SDRAM

IC42S16160
ABSOLUTE MAXIMUM RATINGS⁽¹⁾
Symbol
Parameters
Rating
Unit
VDD
VDDQ
VI
VO
IO
PD
TOPT
TSTG
Supply Voltage (with respect to VSS)
–0.5 to +4.6
V
Supply Voltage for Output (with respect to VSSQ) –0.5 to +4.6
V
Input Voltage (with respect to VSS)
–0.5 to VDD+0.5
V
Output Voltage (with respect to VSSQ)
–1.0 to VDDQ+0.5
V
Short circuit output current
50
mA
Power Dissipation (TA = 25 °C)
1
W
Operating Temperature
0 to +70
°C
Storage Temperature
–65 to +150
°C
Notes:
1. Exposing the device to stress above those listed in Absolute Maximum Ratings could cause permanent
damage. The device is not meant to be operated under conditions outside the limits described in the
operational section of this specification. Exposure to Absolute Maximum Rating conditions for extended
periods may affect device reliability.
DC RECOMMENDED OPERATING CONDITIONS
(At TA = 0 to +70°C unless otherwise noted)
Symbol
Parameter
VDD
VDDQ
VIH
VIL
Supply Voltage
Supply Voltage for DQ
High Level Input Voltage (all Inputs)
Low Level Input Voltage (all Inputs)
Notes:
1. All voltages are referenced to VSS =0V
2. VIH(max) for pulse width with ≤ 3ns of duration
3. VIL(min) for pulse width with ≤ 3ns of duration
Min.
3.0
3.0
2.0
-1.2
Typ.
3.3
3.3
—
—
Max.
3.6
3.6
VDD + 1.2
+0.8
CAPACITANCE CHARACTERISTICS
(At TA = 0 ~ 70°C, VDD = VDDQ = 3.3 ± 0.3V, VSS = VSSQ = 0V , unless otherwise noted)
Symbol
CIN
CCLK
CI/O
Parameter
Input Capacitance, address & control pin
Input Capacitance, CLK pin
Data Input/Output Capacitance
Unit
V
V
V
V
Max. Unit
5
pF
4
pF
6.5
pF
6
Integrated Circuit Solution Inc.
DR037-0A 9/05/2003