IC42S16160 Datasheet, PDF (22/69 Pages) Integrated Circuit Solution Inc – 4M x 16Bit x 4 Banks (256-MBIT) SDRAM

IC42S16160
Write with Auto Precharge
During a write cycle, the auto precharge starts at the timing that is equal to the value of tDPL(min.) after the last data word
input to the device.
WRITE with AUTO PRECHRGE
CLK
Command
CAS latency = 2
DQ
Burst lengh = 4
T0
T1
T2
T3
T4
T5
T6
T7
T8
WRITA B
AUTO PRECHARGE starts
t_DPL
DB0
DB1
DB2
DB3
Hi - Z_
Command
CAS latency = 3
DQ
WRITA B
DB0
DB1
Remark WRITA means WRITE with AUTO Precharge
DB2
AUTO PRECHARGE starts
t_DPL
DB3
Hi - Z
In summary, the auto precharge cycle begins relative to a reference clock that indicates the last data word is valid. In the
table below, minus means clocks before the reference; plus means clocks after the reference.
CAS latency
2
3
Read
-1
-2
Write
+ tDPL((min.)
+ tDPL((min.)
22
Integrated Circuit Solution Inc.
DR037-0A 9/05/2003