IC42S16160 Datasheet, PDF (25/69 Pages) Integrated Circuit Solution Inc – 4M x 16Bit x 4 Banks (256-MBIT) SDRAM

IC42S16160
READ to WRITE Command Interval
CLK
Command
DQM
DQ
CAS latency=2
T0
T1
T2
T3
T4
T5
T6
T7
T8
Read
Write
Hi-Z
D0
D1
D2
D3
1 cycle
CLK
Command
DQM
DQ
Burst length=8, CAS latency=2
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
Read
Write
Q0
Q1
Q2
D0
D1
D2
Hi-Z is
necessary
CLK
Command
DQM
DQ
example: Burst length=4, CAS latency=3
T0
T1
T2
T3
T4
T5
T6
T7
T8
Read
Write
Q2
Hi-Z is
D0
D1
D2
necessary
Integrated Circuit Solution Inc.
25
DR037-0A 9/05/2003