IC-GD Datasheet, PDF (9/55 Pages) IC-Haus GmbH – UNIVERSAL I/O INTERFACE

iC-GD
UNIVERSAL I/O INTERFACE
preliminary
Rev A1, Page 9/55
ELECTRICAL CHARACTERISTICS
Operating conditions: VB = 14.5...16 V, VNB = -15 V ±1 V, VDA = 18...36 V or VDA = VB, VCC = 3.3...5 V ±5%, RREF = 20 kΩ ±0.1% TK5,
Tj = -20...105 °C, if not otherwise stated
Item Symbol Parameter
No.
Conditions
Unit
Min. Typ. Max.
705 Vt(VNB)hi Lower Undervoltage Threshold
VNB
-13.9 -13.5
V
706 V(VNB)hys Hysteresis Undervoltage VNB VNBhys = Vt(VNB)hi − Vt(VNB)lo
-800 -500 -200 mV
707 Vt(VCC)lo Lower Undervoltage Threshold
VCC
2.8 2.9
V
708 Vt(VCC)hi Upper Undervoltage Threshold
VCC
3
3.13
V
709 V(VCC)hys Hysteresis Undervoltage VCC VCChys = Vt(VCC)hi − Vt(VCC)lo
50 100 300 mV
710 Vt(VDA)lo Lower Undervoltage Threshold Bit VDA_VB = lo
VDA
15
16
V
711 Vt(VDA)hi Upper Undervoltage Threshold Bit VDA_VB = lo
VDA
16.5 17.5
V
712 V(VDA)hys Hysteresis Undervoltage VDA
VDAhys = Vt(VDA)hi − Vt(VDA)lo,
bit VDA_VB = lo
250 500 1000 mV
713 ∆(VB,VDA) Error Message at voltage differ- ∆V(VB,VDA) = MAX(|VB − VDA|),
0.75
V
ence between VB and VDA
bit VDA_VB = hi
Temperature Monitor
901 T1off
Thermal Shutdown Temperature Increasing temperature Tj
125 140 155
°C
902 T1on
Thermal Shutdown Reset Tem- Decreasing temperature Tj
perature
115 130 145
°C
903 T1hys
Thermal Hysteresis 1
T1hys = T1off − T1on
5
10
20
°C
904 T2off
Thermal Shutdown Temperature Increasing temperature Tj
2
145 160 175
°C
905 T2on
Thermal Shutdown Reset Tem- Decreasing temperature Tj
perature 2
135 150 165
°C
906 T2hys
Thermal Hysteresis 2
T2hys = T2off − T2on
5
10
25
°C
907 dToff
Difference Thermal Shutdown dToff = T2off − T1off
Temperature
10
20
40
°C
908 dTon
Difference Thermal Shutdown dTon = T2on − T1on
Reset Temperature
10
20
40
°C
909 R()
Temperature Converter Resolu- Range -64...191 °C
tion
8
Bit
910 R()
Temperature Converter Range Minimum usable temperature range
-41
183
°C
911 Toffset
912 Tdiff()
Maximum Temperature Offset
Temperature Converter
Difference
Calibration via AOCT(4:0)
After calibration;
Tj = 25 °C
Tj = -20...105 °C
-16
15 LSB
-1
1
°C
-2
2
°C
Digital Outputs IAx, x = 1, 2
B01 Vs()hi
Saturation Voltage hi at IAx
Vs(IAx)hi = VDA − V(), I(IAx) = -200 mA,
T < T2on;
-20 °C
27 °C
105 °C
0.5
V
0.7
V
0.9
V
B02 Vs()hi
Saturation Voltage hi at IAx
Vs(IAx)hi = VDA − V(), I(IAx) = -500 mA,
high-side driver active, T < T2on
2
V
B03 Isc()hi
Short-Circuit Current hi from IAx VDA − 36 V < V(IAx) < VDA − 3 V,
high-side driver active, T < T1on
-800
-505 mA
B04 Ipu()
Pull-up Current
Hi-side driver configuration, IAx = lo,
VDA = 18...32 V;
V() = VDA − 2 V...VB
V() = VB...VB − 3 V
V() = VB −3 V...0 V
-100
-120
-120
-10
µA
-40
µA
-80
µA
B05 Vpu()
Pull-up Voltage
Vpu() = V() − VDA, I() = -5...5 µA, hi-side driver -1.8
V
configuration, IAx = lo, pull-up current active
B06 Vto()hi Upper Trigger Threshold hi at IAx Vto() = VDA − V(IAx)
2.2 2.45 2.9
V
B07 Vtu()hi Lower Trigger Threshold hi at IAx Vtu() = VDA − V(IAx)
2.3 2.7
3
V