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IC-GD Datasheet, PDF (10/55 Pages) IC-Haus GmbH – UNIVERSAL I/O INTERFACE
iC-GD
UNIVERSAL I/O INTERFACE
preliminary
Rev A1, Page 10/55
ELECTRICAL CHARACTERISTICS
Operating conditions: VB = 14.5...16 V, VNB = -15 V ±1 V, VDA = 18...36 V or VDA = VB, VCC = 3.3...5 V ±5%, RREF = 20 kΩ ±0.1% TK5,
Tj = -20...105 °C, if not otherwise stated
Item Symbol Parameter
No.
Conditions
Unit
Min. Typ. Max.
B08 Vhys()hi
B09 Vs()lo
Hysteresis Trigger Threshold hi
at IAx
Saturation Voltage lo at IAx
Vhys,hi = Vto()hi − Vtu()hi
I(IAx) = 200 mA, low-side driver active,
T < T2on;
Tj = -20 °C
Tj = 25 °C
Tj = 105 °C
100 250 600 mV
0.6
V
0.8
V
0.94
V
B10 Vs()lo
Saturation Voltage lo at IAx
I(IAx) = 500 mA, low-side driver active,
T < T2on
2.35
V
B11 Isc()lo
Short-Circuit Current lo from IAx 3 V < V(IAx) < 36 V, low-side driver active,
505
T < T1on
800 mA
B12 Ipd()
Pull-down Current
Lo-side driver configuration, IAx = hi,
VDA = 18...32 V
V() = 2 V...VB − 3 V, V(LED) < 3 V
V() = VB − 3 V...VB,
V() = VB...VDA
15
20
25
µA
15
80
µA
30
160 µA
B13 Vpd()
Pull-down Voltage
I() = -5...5 µA, lo-side driver configuration,
IAx = hi, pull-down current active
1
V
B14 Vs()lo,r Saturation Voltage lo at IAx
I(IAx) = -200 mA, low-side driver active,
T < T2on
-1.2 -0.6
0
V
B15 Ir,max()
Maximum Reverse Current from -2 V < V() < GNDP, low-side driver active
IAx
VB − 36 V < V() < -2 V
-800
-10
0
mA
0
mA
B16 Vto()lo Upper Trigger Threshold lo at IAx ENDOSC_x = lo
2.35 2.7
3
V
B17 Vtu()lo Lower Trigger Threshold lo at IAx ENDOSC_x = lo
2.2 2.5 2.9
V
B18 Vhys()lo Hysteresis Trigger Threshold lo ENDOSC_x = lo, Vhys,lo = Vto()lo − Vtu()lo
at IAx
100 300 500 mV
B19 Ilk()
Leakage Current in IAx
Output, pull-up, pull-down current inactive;
V(IAx) = 0 V...VB − 3 V
-1
V(IAx) = VB − 3 V...VDA
-1
1
µA
120 µA
B20 Ir()
Reverse Current in IAx
V(IAx) > VDA + 0.1 V
0
2
mA
B21 f()max,out Maximum Output Frequency
Digital output as output
125
kHz
B22 f()max,in Maximum Input Frequency
Digital output as input
125
kHz
B23 td(),ol
Delay to open-load detection
1
2
ms
B24 Vf()hi
Free-Wheeling Voltage hi at IAx Low-side driver configuration, vs. GND,
I(IAx) = 80 mA, IAx = hi, L = 10 mH
36
41
48
V
B25 Vf()lo
Free-Wheeling Voltage lo at IAx High-side driver configuration, vs. VDA,
I(IAx) = -80 mA, IAx = lo, L = 10 mH
-54 -44 -40
V
B26 tr
Rise Time
IAx: 3 V → 13 V
869
ns
B27 tf
Fall time
IAx: VDA − 3 V → 8 V, VDA = 18...30 V
869
ns
B28 Vto()lo Upper Threshold lo at IAx
ENDOSC_x = hi
1
1.3 1.6
V
B29 Vtu()lo Lower Threshold lo at IAx
ENDOSC_x = hi
0.8
1
1.4
V
B30 Vhys()lo Hysteresis Threshold lo at IAx ENDOSC_x = hi, Vhys,lo = Vto()lo − Vtu()lo
100 300 500 mV
Digital Inputs IAx, x = 1, 2
C01 Vt()hi
Upper Input Threshold
10
11
V
C02 Vt()lo
Lower Input Threshold
5
8
V
C03 Vhys() Hysteresis at IAx
Vhys() = Vt()hi − Vt()lo
1
2
3
V
C04 Ipu()
Pull-up Current
V() = VDA − 3... 0 V, DI_SEL_x = 00
VDA = 18...32 V
VDA = 18...36 V
-6
-3
-2
mA
-6
-3
-1
mA
C05 Vpu()
Pull-up Voltage
Vpu() = V() − VDA, I() = -1 mA, DI_SEL_x = 00 -2.5
V