IC-MH16_15 Datasheet, PDF (7/25 Pages) IC-Haus GmbH – 12-BIT ANGULAR HALL ENCODER

iC-MH16
12-BIT ANGULAR HALL ENCODER
preliminary
Rev A1, Page 7/25
ELECTRICAL CHARACTERISTICS
Operating conditions:
VDD = 5 V ±10 %, EP = VNA1 = VNA2 = VND, Tj = -40...125 °C, IBM adjusted to 200 µA, 4 mm NdFeB magnet, unless otherwise noted
Item Symbol Parameter
No.
Conditions
Unit
Min. Typ. Max.
Zapping VZAP
A01 Vt()hi
Input Threshold Voltage hi
with reference to VND
2
V
A02 Vt()lo
Threshold Voltage lo
with reference to VND
0.8
V
A03 Vt()hys Hysteresis
Vt()hys = Vt()hi − Vt()lo
140 250
mV
A06 V()zap Zapping Voltage
PROG = ’1’
6.9 7.0 7.1
V
A09 Rpd()
Pull-Down Resistor
30
55
kΩ
Incr Interface Line Driver Outputs A, B, Z, NA, NB, NZ
P01 Vs()hi
Saturation Voltage hi
Vs() = VDD − V();
CFGDR(1:0) = 0x00, I() = -4 mA
CFGDR(1:0) = 0x01, I() = -50 mA
CFGDR(1:0) = 0x10, I() = -50 mA
CFGDR(1:0) = 0x11, I() = -20 mA
200 mV
700 mV
700 mV
400 mV
P02 Vs()lo
Saturation Voltage lo
with reference to GND;
CFGDR(1:0) = 0x00, I() = -4 mA
CFGDR(1:0) = 0x01, I() = -50 mA
CFGDR(1:0) = 0x10, I() = -50 mA
CFGDR(1:0) = 0x11, I() = -20 mA
200 mV
700 mV
700 mV
400 mV
P03 Isc()hi
Short-Circuit Current hi
V() = GND;
CFGDR(1:0) = 0x00
CFGDR(1:0) = 0x01
CFGDR(1:0) = 0x10
CFGDR(1:0) = 0x11
-12
-125
-125
-60
-4
mA
-50 mA
-50 mA
-20 mA
P04 Isc()lo
Short-Circuit Current lo
V() = VDD;
CFGDR(1:0) = 0x00
CFGDR(1:0) = 0x01
CFGDR(1:0) = 0x10
CFGDR(1:0) = 0x11
4
12
mA
50
125 mA
50
125 mA
20
60
mA
P05 Ilk()tri
Tristate Leakage Current
TRIHL(1:0) = 0x11 or reversed supply
-20
20
µA
P06 tr()
Rise-Time lo to hi
RL = 100 Ω to GND;
CFGDR(1:0) = 0x00
CFGDR(1:0) = 0x01
CFGDR(1:0) = 0x10
CFGDR(1:0) = 0x11
5
20
ns
5
20
ns
50
350
ns
5
40
ns
P07 tf()
Fall-Time hi to lo
RL = 100 Ω to VDD;
CFGDR(1:0) = 0x00
CFGDR(1:0) = 0x01
CFGDR(1:0) = 0x10
CFGDR(1:0) = 0x11
5
20
ns
5
20
ns
50
350
ns
5
40
ns
Comm Interface Outputs U, V, W
Q01 Vs()hi
Saturation Voltage hi
Vs() = VDD − V(); I() = -12 mA
400 mV
Q02 Vs()lo
Saturation Voltage lo
with reference to GND; I() = -12 mA
400 mV
Q03 Isc()hi
Short-Circuit Current hi
V() = GND
-60
-20 mA
Q04 Isc()lo
Short-Circuit Current lo
V() = VDD
20
60
mA
Q05 Ilk()tri
Tristate Leakage Current
reversed supply voltage
-20
20
µA
Q06 tr()
Rise Time
RL = 100 Ω to VDD
5
40
ns
Q07 tf()
Fall Time
RL = 100 Ω to GND
5
40
ns
Reverse Polarity Protection VPA, VPD, VNA1, VNA2, VND
R01 Vs()
Saturation Voltage at VPA, VPD Vs() = VDD − V(); I() = -10 . . . 0 mA
450 mV
R02 Vs()
Saturation Voltage at VNA1,
VNA2, VND
Vs() = GND − V(); I() = -10 . . . 0 mA
450 mV