HY5S5B6GLF-6 Datasheet, PDF (8/52 Pages) Hynix Semiconductor – 256Mbit (16Mx16bit) Mobile SDR Memory

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256Mbit (16Mx16bit) Mobile SDR Memory
HY5S5B6GLF(P)-xE Series
ABSOLUTE MAXIMUM RATING
Parameter
Ambient Temperature
Storage Temperature
Voltage on Any Pin relative to VSS
Voltage on VDD relative to VSS
Voltage on VDDQ relative to VSS
Short Circuit Output Current
Power Dissipation
Soldering Temperature ^. Time
Symbol
TA
TSTG
VIN, VOUT
VDD
VDDQ
IOS
PD
TSOLDER
Rating
-25 ~ 85
-55 ~ 125
-1.0 ~ 2.6
-1.0 ~ 2.6
-1.0 ~ 2.6
50
1
260 ^. 10
Unit
o_C
o_C
V
V
V
mA
W
o_C . _Sec
DC OPERATING CONDITION (TA= -25 to 85^oC )
Parameter
Power Supply Voltage
Power Supply Voltage
Input High Voltage
Input Low Voltage
Symbol
Min
Typ
Max
Unit
Note
VDD
1.7
1.8
1.95
V
1
VDDQ
1.7
1.8
1.95
V
1, 2
VIH
0.8*VDDQ
-
VDDQ+0.3
V
1, 2
VIL
-0.3
-
0.3
V
1, 2
Note :
1. All Voltages are referenced to VSS = 0V
2. VDDQ must not exceed the level of VDD
AC OPERATING TEST CONDITION (TA= -25 to 85 ^oC, VDD = 1.8V, VSS = 0V)
Parameter
AC Input High/Low Level Voltage
Input Timing Measurement Reference Level Voltage
Input Rise/Fall Time
Output Timing Measurement Reference Level Voltage
Output Load Capacitance for Access Time Measurement
Symbol
VIH / VIL
Vtrip
tR / tF
Voutref
CL
Value
0.9*VDDQ/0.2
0.5*VDDQ
1
0.5*VDDQ
30
Unit
V
V
ns
V
pF
Note
1
Note 1.
Vtt=0.5xVDDQ
50Ω
Output
ZO=50Ω
30pF
Rev 1.0 / Apr. 2006
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