HY5S5B6GLF-6 Datasheet, PDF (1/52 Pages) Hynix Semiconductor – 256Mbit (16Mx16bit) Mobile SDR Memory

256MBit MOBILE SDR SDRAMs based on 4M x 4Bank x16 I/O
Specification of
256M (16Mx16bit) Mobile SDRAM
Memory Cell Array
- Organized as 4banks of 4,194,304 x16
This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for
use of circuits described. No patent licenses are implied.
Rev 1.0 / Apr. 2006
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