HY5S5B6GLF-6 Datasheet, PDF (16/52 Pages) Hynix Semiconductor – 256Mbit (16Mx16bit) Mobile SDR Memory

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256Mbit (16Mx16bit) Mobile SDR Memory
HY5S5B6GLF(P)-xE Series
BASIC FUNCTIONAL DESCRIPTION (Continued)
Extended Mode Register
BA1 BA0 A12 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0
1
0
0
0
0
0
0
0
DS
0
0
PASR
DS (Driver Strength)
A6 A5 Driver Strength
0
0 Full
0
1 1/2 Strength
1
0 1/4 Strength
1
1 Reserved
PASR (Partial Array Self Refresh)
A2 A1 A0 Self Refresh Coverage
0 0 0 All Banks
0 0 1 Half of Total Bank (BA1=0 or Bank 0,1)
0 1 0 Quarter of Total Bank (BA1=BA0=0 or Bank 0)
0 1 1 Reserved
1 0 0 Reserved
1 0 1 Half of Bank 0(Bank 0 and Row Address MSB=0)
1 1 0 Quarter of Bank 0(Bank 0 and Row Address 2 MSBs=0)
1 1 1 Reserved
Rev 1.0 / Apr. 2006
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