HY5S5B6GLF-6 Datasheet, PDF (13/52 Pages) Hynix Semiconductor – 256Mbit (16Mx16bit) Mobile SDR Memory

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256Mbit (16Mx16bit) Mobile SDR Memory
HY5S5B6GLF(P)-xE Series
AC CHARACTERISTICS II (AC operating conditions unless otherwise noted)
Parameter
RAS Cycle Time
RAS to CAS Delay
RAS Active Time
RAS Precharge Time
RAS to RAS Bank Active Delay
AUTO REFRESH Period
CAS to CAS Delay
Write Command to Data-In Delay
Data-in to Precharge Command
Data-In to Active Command
DQM to Data-Out Hi-Z
DQM to Data-In Mask
MRS to New Command
Precharge to Data Output
High-Z
CAS Latency=3
Power Down Exit Time
Exit Self Refresh Time
Refresh Time
6
H
S
Symbol
Unit Note
Min Max Min Max Min Max
tRC
60 - 72.5 - 74 - ns
tRCD
18 - 22.5 - 28.5 - ns
tRAS
42 100K 50 100K 60 100K ns
tRP
18 - 22.5 - 28.5 - ns
tRRD
12 - 15 - 19 - ns
tRFC
80 - 80 - 80 - ns
tCCD
1
-
1
-
1
- CLK
tWTL
0
-
0
-
0
- CLK
tDPL
2
-
2
-
2
- CLK
tDAL
tDPL+tRP
tDQZ
2
-
2
-
2
- CLK
tDQM
0
-
0
-
0
- CLK
tMRD
2
-
2
-
2
- CLK
tPROZ3
3
-
3
-
3
- CLK
tDPE
tXSR
tREF
1
-
1
-
1
- CLK
80 - 80 - 80 - ns
- 64 - 64 - 64 ms
Rev 1.0 / Apr. 2006
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