HY5S5B6GLF-6 Datasheet, PDF (5/52 Pages) Hynix Semiconductor – 256Mbit (16Mx16bit) Mobile SDR Memory

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256Mbit (16Mx16bit) Mobile SDR Memory
HY5S5B6GLF(P)-xE Series
256Mb Mobile SDR SDRAM ORDERING INFORMATION
Part Number
HY5S5B6GLF-6
HY5S5B6GLF-H
HY5S5B6GLF-S
HY5S5B6GLFP-6
HY5S5B6GLFP-H
HY5S5B6GLFP-S
HY5S5B6GLF-6E
HY5S5B6GLF-HE
HY5S5B6GLF-SE
HY5S5B6GLFP-6E
HY5S5B6GLFP-HE
HY5S5B6GLFP-SE
Clock Fre-
quency
CAS
Latency
Organization Interface
Operation
temperature
54Ball
FBGA
166MHz
3
133MHz
3
Leaded
105MHz
3
166MHz
3
Commercial
Temp
(-0^oC ~ 70^oC)
133MHz
3
Lead Free
105MHz
166MHz
3
3
4banks x 4Mb x
16
LVCMOS
133MHz
3
Leaded
105MHz
3
166MHz
3
Extended Temp
(-25^oC ~ 85^oC)
133MHz
3
Lead Free
105MHz
3
Rev 1.0 / Apr. 2006
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