HY5S5B6GLF-6 Datasheet, PDF (17/52 Pages) Hynix Semiconductor – 256Mbit (16Mx16bit) Mobile SDR Memory

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256Mbit (16Mx16bit) Mobile SDR Memory
HY5S5B6GLF(P)-xE Series
COMMAND TRUTH TABLE
Function
CKEn-1
CKEn
CS
RAS
CAS
WE
DQM
ADDR
A10
/AP
BA
Note
Mode Register Set
H
Extended Mode Register
Set
H
No Operation
H
Device Deselect
H
Bank Active
H
Read
H
Read with Autoprecharge
H
Write
H
Write with Autoprecharge
H
Precharge All Banks
H
Precharge selected Bank
H
Burst stop
H
Data Write/Output Enable
H
Data Mask/Output Disable
H
Auto Refresh
H
Self Refresh Entry
H
Self Refresh Exit
L
Precharge Power Down
Entry
H
Precharge Power Down Exit
L
Clock Suspend Entry
H
Clock Suspend Exit
L
Deep Power Down Entry
H
Deep Power Down Exit
L
X
L
L
L
L
X
Op Code
2
X
L
L
L
L
X
Op Code
2
X
L
H
H
H
X
X
X
H
X
X
X
X
X
X
L
L
H
H
X
Row Address
V
X
L
H
L
H
Column L
V
X
L
H
L
H
X Column H
V
X
L
H
L
L
X Column L
V
X
L
H
L
L
X Column H
V
X
L
L
H
L
X
X
H
X
X
L
L
H
L
X
X
L
V
X
L
H
H
L
X
X
X
X
X
X
X
X
V
X
H
L
L
L
H
X
X
L
L
L
L
H
X
X
H
X
X
X
H
X
X
1
L
H
H
H
H
X
X
X
L
X
X
L
H
H
H
H
X
X
X
H
X
X
L
H
H
H
H
X
X
X
L
X
X
L
V
V
V
H
X
X
X
L
L
H
H
L
X
X
H
X
X
X
Note : 1. Exiting Self Refresh occurs by asynchronously bringing CKE from low to high.
2. BA1/BA0 must be issued 0/0 in the mode register set, and 1/0 in the extended mode register set.
Rev 1.0 / Apr. 2006
17