HY5PS1G431CFP_08 Datasheet, PDF (24/45 Pages) Hynix Semiconductor – 1Gb DDR2 SDRAM

HY5PS1G4(8,16)31C(L)FP
HY5PS1G4(8,16)31CFR
-Continued-
Parameter
Symbol
Four Active Window for 1KB page size
products
tFAW
Four Active Window for 2KB page size
products
tFAW
CAS to CAS command delay
tCCD
Write recovery time
tWR
Auto precharge write recovery +
precharge time
tDAL
Internal write to read command delay
tWTR
Internal read to precharge command delay tRTP
Exit self refresh to a non-read command tXSNR
Exit self refresh to a read command
tXSRD
Exit precharge power down to any non-
tXP
read command
Exit active power down to read command tXARD
Exit active power down to read command
(Slow exit, Lower power)
CKE minimum pulse width
(HIGH and LOW pulse width)
tXARDS
tCKE
ODT turn-on delay
tAOND
ODT turn-on
tAON
ODT turn-on(Power-Down mode)
ODT turn-off delay
ODT turn-off
tAONPD
tAOFD
tAOF
ODT turn-off (Power-Down mode)
ODT to power down entry latency
ODT power down exit latency
OCD drive mode output delay
Minimum time clocks remains ON after
CKE asynchronously drops LOW
tAOFPD
tANPD
tAXPD
tOIT
tDelay
DDR2-400
min
max
37.5
-
50
-
2
15
-
WR+tRP*
-
10
-
7.5
tRFC + 10
200
-
2
-
2
6 - AL
3
2
tAC(min)
tAC(min)+
2
2.5
tAC(min)
2
tAC(max)
+1
2tCK+tAC
(max)
+1
2.5
tAC(max)
+ 0.6
tAC(min)+ 2.5tCK+tA
2
C(max)+1
3
8
0
12
tIS+tCK+tI
H
DDR2-533
min
max
37.5
-
50
-
2
15
-
WR+tRP*
-
7.5
-
7.5
tRFC + 10
200
-
2
-
2
6 - AL
3
2
tAC(min)
2
tAC(max)
+1
tAC(min)+ 2tCK+tA
2
C(max)+1
2.5
tAC(min)
tAC(min)+
2
3
8
0
tIS+tCK+tI
H
2.5
tAC(max)
+ 0.6
2.5tCK+t
AC(max)
+1
12
Units
ns
ns
tCK
ns
tCK
ns
ns
ns
tCK
tCK
tCK
tCK
tCK
tCK
ns
ns
tCK
ns
ns
tCK
tCK
ns
ns
Notes
14
24
3
1
1, 2
27
16
16
17,44
17,44
15
Rev. 0.7 / Nov. 2008
24