GMS81004 Datasheet, PDF (19/101 Pages) Hynix Semiconductor – 8-BIT SINGLE CHIP MICROCOMPUTERS

Chapter 1. Overview
1.6.3 DC Characteristics (VDD = 2.0~4.0, Vss = 0V, Ta = 0¡É ~ 70¡É)
Parameter
Symbol
Condition
Specification
min typ max
Unit
high level
input voltage
VIH1
VIH2
R11, R12, R14, RESETB
R0, R1(Except R11,R12,R14 ) , R2
0.8VDD
0.7VDD
VDD
V
VDD
V
low level
input voltage
VIL1 R11, R12, R14, RESETB
0
VIL2 R0, R1(Except R11,R12,R14 ) , R2
0
0.2VDD V
0.3VDD V
high level input
leakage current
IIH
R0,R1,R2,RESETB VIH=VDD
1
uA
low level input
leakage current
IIL
R0,R1,R2,RESETB
(without pull-up)
VIL=0V
-1 uA
VOH1 R0
IOH=-0.5mA VDD-0.4
V
high level
VOH2 R1(ExceptR17),R2 IOH=-1mA
VDD-0.4
V
output voltage
VOH3 R17
IOH=-8mA
VDD-0.9
V
VOH5 OSC
IOH=-200uA VDD-0.9
V
low level
output voltage
high level output
leakage current
low level output
leakage current
high level output
current
low level output
current
input pull-up
current
VOL1
VOL2
VOL5
IOHL
IOLL
IOH
IOL
IP1
IP2
R0
R1, R2
OSC
R0, R1, R2
R0, R1, R2
REMOUT
REMOUT
RESETB
R0, R1, R2
IOL=1mA
IOL=5mA
IOL=200uA
VOH=VDD
VOL=0V
VOH=2V
VOL=1V
VDD=3V
VDD=3V
0.4
V
0.8
V
0.8
V
1
uA
-1 uA
-30 -12 -5 mA
0.5
-
3
mA
15
30 60 uA
10
20 40 uA
POWER
SUPPLY
CURRENT
RAM retention
supply voltage
VDD=4V
fXIN=4MHz
IDD
operating
current
VDD=2.2V
VDD=4V
fXIN=2MHz
VDD=2V
4
10 mA
2.4
6
mA
2.4
6
mA
1.2
3
mA
ISTOP
stop
mode
current
oscillator ^VDD=4V
---
3
10 uA
stop
VDD=2V
---
2
8
uA
VRET
0.7
V
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