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HD66420 Datasheet, PDF (49/52 Pages) Hitachi Semiconductor – (RAM-Provided 160 Channel 4-Level Grey Scale Driver for Dot Matrix Graphics LCD)
HD66420
Electrical Characteristics
DC Characteristics (VCC = 2.2 to 5.5V, GND = 0V, VLCD = 6 to 13V, Ta = –40 to +85°C)*10
Item
Symbol Terminals Min
Typ
I/O leakage current IIOL
–1
—
V-pins leakage
IVL
current
–10
—
Driver on resistance Ron
SEG1 to
SEG160
COM1 to
COM80
Input high voltage
Input low voltage
VIH1
VIL1
0.8 × VCC —
0
—
Output high voltage VOH
Output low voltage VOL
DB7 to DB0 0.8 × VCC —
DB7 to DB0 0
—
Current consumption Idisp VCC
during display
—
55
—
25
Current consumption Istb
VCC
during standby
—
1
Current consumption Ilcd
VLCD
—
30
LCD drive part
Max
Unit
1
µA
10
µA
20
kΩ
VCC
V
0.2 × VCC V
VCC
V
0.2 × VCC V
80
µA
40
µA
5
µA
50
µA
Test Condition Notes
Vin = VCC to GND 1
Vin = GND to 2
VLCD
ION = 100 µA
3
VLCD = 6 V
1
1
IOH = –50 µA
4
IOL = 50 µA
4
VCC =3.0 V
5, 6
Rf = 24 kΩ
5, 7
5, 8
5, 9
Note:
1. Applies to pins: M/S, CS, RS, WR, RD, RES, OSC, DB7 to DB0, CL1, M and FLM
2. Applies to pins: V0O, V1O, V2O, V3O, V4O and V5O
3. Indicates the resistance between one pin from SEG1 to SEG160and another pin from V1O to
V5O
V1O and V2O should be near VLCD level, and V3O to V5O should be near GND level. All
voltage must be within ∆V.∆V is the range within which Ron is stable. V1 to V4 levels should
keep following condition:VLCD≥V1O≥V2O≥V3O≥V4O≥V5O≥GND
4. Applies to pins: DB7-DB0, CO, CL1, M and FLM
5. Input and output current are excluded. When a CMOS input is floating, excess current flows from
power supply to the input circuit. To avoid this, ViH and ViL must be held to Vcc and GND levels,
respectively.
The current which flows at resistive divider and LCD are excluded.
Where the unmolded side of LSI is exposed to light , excess current flows. Use under sealed
condition.
6. Specified under following conditions:
Internal oscillator is used; Rf = 240kΩ
32-levels gray scale mode; GRAY = 0
VCC = 3.0V
Checker board is displayed
No access fro CPU
7. Specified under following conditions:
Internal oscillator is used; Rf = 240kΩ
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