GS4576C09 Datasheet, PDF (6/62 Pages) GSI Technology – 64M x 9, 32M x 18, 16M x 36 576Mb CIO Low Latency DRAM (LLDRAM II)

GS4576C09/18/36L
Ball Descriptions (Continued)
Symbol
QVLD
Type
Output
Description
Data Valid—The QVLD pin indicates valid output data. QVLD is edge-aligned with QKx and QKx.
TDO
Output
IEEE 1149.1 Test Output—JTAG output. This ball may be left as no connect if the JTAG function is not
used.
V_DD
Supply
Power Supply—Nominally, 1.8 V. See the DC Electrical Characteristics and Operating Conditions
section for range.
V_DDQ
Supply
DQ Power Supply—Nominally, 1.5 V or 1.8 V. Isolated on the device for improved noise immunity. See
the DC Electrical Characteristics and Operating Conditions section for range.
V_EXT
Supply
Power Supply—Nominally, 2.5 V. See the DC Electrical Characteristics and Operating Conditions
section for range.
V_SS
Supply Ground
V_TT
—
Power Supply—Isolated termination supply. Nominally, V_DDQ/2. See the DC Electrical Characteristics
and Operating Conditions section for range.
A22
—
Reserved for Future Use—This signal is not connected and may be connected to ground.
DNU
—
Do Not Use—These balls may be connected to ground.
NF
—
No Function—These balls can be connected to ground.
Rev: 1.04 11/2013
6/62
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2011, GSI Technology