GS832418B Datasheet, PDF (19/46 Pages) GSI Technology – 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs

Preliminary
GS832418(B/C)/GS832436(B/C)/GS832472(C)
Absolute Maximum Ratings
(All voltages reference to V_SS)
Symbol
Description
Value
Unit
V_DD
V_DDQ
V_CK
V_I/O
V_IN
I_IN
I_OUT
P_D
T_STG
T_BIAS
Voltage on V_DD Pins
Voltage in V_DDQ Pins
Voltage on Clock Input Pin
Voltage on I/O Pins
Voltage on Other Input Pins
Input Current on Any Pin
Output Current on Any I/O Pin
Package Power Dissipation
Storage Temperature
Temperature Under Bias
–0.5 to 4.6
V
–0.5 to 4.6
V
–0.5 to 6
V
–0.5 to V_DDQ +0.5 (≤ 4.6 V max.)
V
–0.5 to V_DD +0.5 (≤ 4.6 V max.)
V
+/–20
mA
+/–20
mA
1.5
W
–55 to 125
o_C
–55 to 125
o_C
Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended
Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of
this component.
Rev: 1.00 10/2001
19/46
© 2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.