GS8170LW36 Datasheet, PDF (15/27 Pages) GSI Technology – 18Mb sigma 1x1Lp CMOS I/O Late Write SigmaRAM

GS8170LW36/72C-333/300/250/200
Input and Output Leakage Characteristics
Parameter
Input Leakage Current
(except mode pins)
ZQ, MCH, MCL, EP2, EP3
Pin Input Current
Symbol
I_IL
I_INM
Output Leakage Current
I_OL
Test Conditions
V_IN = 0 to V_DDQ
V_IN = 0 to V_DDQ
Output Disable,
V_OUT = 0 to V_DDQ
Selectable Impedance Output Driver DC Electrical Characteristics
Parameter
Symbol
Low Drive Output High Voltage
V_OHL
Low Drive Output Low Voltage
V_OLL
High Drive Output High Voltage
V_OHH
High Drive Output Low Voltage
V_OLH
Notes:
1. ZQ = 1; High Impedance output driver setting
2. ZQ = 0; Low Impedance output driver setting
Test Conditions
I_OHL = –4 mA
I_OLL = 4 mA
I_OHH = –8 mA
I_OLH = 8 mA
Min.
–2 uA
–50 uA
–2 uA
Max Notes
2 uA
—
50 uA
—
2 uA
—
Min.
V_DDQ – 0.4 V
—
V_DDQ – 0.4 V
—
Max Notes
—
1
0.4 V
1
—
2
0.4 V
2
Rev: 2.03 1/2005
15/27
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2002, GSI Technology, Inc.