GS8170LW36 Datasheet, PDF(14/27 Page) GSI Technology – 18Mb sigma 1x1Lp CMOS I/O Late Write SigmaRAM

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GS8170LW36 Datasheet, PDF (14/27 Pages) GSI Technology – 18Mb sigma 1x1Lp CMOS I/O Late Write SigmaRAM

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GS8170LW36/72C-333/300/250/200

Undershoot Measurement and Timing

VIH

VSS

50%

VSS â 1.0 V

20% tKC

Overshoot Measurement and Timing

VDD + 1.0 V

50%

20% tKC

VDD

VIL

Capacitance

(TA = 25oC, f = 1 MHZ, VDD = 1.8 V)

Parameter

Symbol

Input Capacitance

Output Capacitance

Note:

This parameter is sample tested.

CIN

COUT

Test conditions

VIN = 0 V

VOUT = 0 V

AC Test Conditions

Parameter

Input high level

Input low level

Max. input slew rate

Input reference level

Output reference level

AC Test Load Diagram

Typ. Max. Unit

Conditions

VDDQ

2 V/ns

VDDQ/2

RQ = 250 â¦ (HSTL I/O)

50â¦

VT = VDDQ/2

Rev: 2.03 1/2005

14/27

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

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