GS8170LW36 Datasheet, PDF (13/27 Pages) GSI Technology – 18Mb sigma 1x1Lp CMOS I/O Late Write SigmaRAM

GS8170LW36/72C-333/300/250/200
Absolute Maximum Ratings
(All voltages reference to V_SS)
Symbol
Description
Value
Unit
V_DD
Voltage on V_DD Pins
–0.5 to 2.5
V
V_DDQ
Voltage in V_DDQ Pins
–0.5 to V_DD
V
V_I/O
Voltage on I/O Pins
–0.5 to V_DDQ + 0.5 (≤ 2.5 V max.)
V
V_IN
Voltage on Other Input Pins
–0.5 to V_DDQ + 0.5 (≤ 2.5 V max.)
V
I_IN
Input Current on Any Pin
+/–100
mA dc
I_OUT
Output Current on Any I/O Pin
+/–100
mA dc
T_J
Maximum Junction Temperature
125
o_C
T_STG
Storage Temperature
–55 to 125
ºC
Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended
Operating Conditions. Exposure to conditions exceeding the Recommended Operating Conditions, for an extended period of time, may affect
reliability of this component.
Recommended Operating Conditions
Power Supplies
Parameter
Symbol
Min.
Typ.
Max.
Unit Notes
Supply Voltage
V_DD
1.7
1.8
1.95
V
1.8 V I/O Supply Voltage
V_DDQ
1.7
1.8
V_DD
V
Ambient Temperature
(Commercial Range Versions)
T_A
0
25
70
°C
1
Ambient Temperature
(Industrial Range Versions)
T_A
–40
25
85
°C
1
Note:
The part number of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifications quoted
are evaluated for worst case in the temperature range marked on the device.
CMOS I/O DC Input Characteristics
Parameter
Symbol
Min.
Typ.
CMOS Input High Voltage
V_IH
0.65 * V_DDQ
—
CMOS Input Low Voltage
V_IL
–0.3
—
Note:
For devices supplied with CMOS input buffers. Compatible with both 1.8 V and 1.5 V I/O drivers.
Max.
V_DDQ + 0.3
0.35 * V_DDQ
Unit Notes
V
1
V
1
Rev: 2.03 1/2005
13/27
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2002, GSI Technology, Inc.