MB81EDS516545 Datasheet, PDF (9/60 Pages) Fujitsu Component Limited. – MEMORY Consumer FCRAM CMOS 512M Bit (4 bank x 2M word x 64 bit) Consumer Applications Specific Memory for SiP

MB81EDS516545
■ FUNCTIONAL DESCRIPTION
1. Power Up Initialization
This device internal condition after power-up will be undefined. The following Power up initialization sequence
must be performed to start proper device operation.
1. Apply power (VDD should be applied before or in parallel with VDDQ) and start clock. Attempt to maintain
either NOP or DESL command at the input.
2. Maintain stable power, stable clock, and NOP or DESL condition for a minimum of 300 μs.
3. Precharge all banks by PRECHARGE (PRE) or PRECHARGE ALL (PALL) command.
4. Assert minimum of 2 AUTO REFRESH (REF) commands.
5. Program the Mode Register by MODE REGISTER SET (MRS) command.
6. Program the Extended Mode Register (1) by MODE REGISTER SET (MRS) command.
7. Program the Extended Mode Register (2) by MODE REGISTER SET (MRS) command.
In addition, CKE must be High to ensure that output is High-Z state. The Mode Register and Extended Mode
Register (1) and Extended Mode Register (2) can be set before 2 Auto-refresh commands (REF).
2. Mode Register
The Mode Register is used to configure the type of device function among optional features. This device has 3
Mode Registers, Mode Register, Extended Mode Register (1) and Extended Mode Register (2). Mode Registers
can be programmed by MODE REGISER SET (MRS) command. Refer to the “Mode Register Table” in
“■FUNCTIONAL DESCRIPTION”.
DS05-11463-1E
9