MB81EDS516545 Datasheet, PDF (3/60 Pages) Fujitsu Component Limited. – MEMORY Consumer FCRAM CMOS 512M Bit (4 bank x 2M word x 64 bit) Consumer Applications Specific Memory for SiP

MB81EDS516545
■ PIN DESCRIPTIONS
Symbol
CK, CK
CKE
CS
RAS
CAS
WE
BA[1:0]
Type
Input
Input
Input
Input
Input
Input
Input
A[12:0]
Input
AP(A10)
DM[7:0] *¹
DQ[63:0] *^1, *²
RDQS[3:0] *²
WDQS[3:0] *²
SA *³
VDDQ, VDD
VSSQ, VSS
Input
Input
I/O
Output
Input
Input
Supply
Supply
Function
Clock
Clock Enable
Chip Select
Row Address Strobe
Column Address Strobe
Write Enable
Bank Address Inputs
Address Inputs
Row
Column
Auto Precharge Enable
Input Data Mask Enable
Data Bus Input / Output
Read Data Strobe
Write Data Strobe
Select Area Enable
Power Supply
Ground
A0 to A12
A0 to A7
*1 : DM0, DM1, DM2, DM3, DM4, DM5, DM6 and DM7 correspond to DQ[7:0], DQ[15:8], DQ[23:16], DQ[31:24],
DQ[39:32], DQ[47:40], DQ[55:48] and DQ[63:56].
*2 : Unidirectional data strobe per 2 byte. RDQS0/WDQS0, RDQS1/WDQS1, RDQS2/WDQS2 and RDQS3/
WDQS3 correspond to DQ[15:0], DQ[31:16], DQ[47:32] and DQ[63:48].
*3 : SA can be tied to VSS if the optional commands, MULTI BANK ACTIVE (MACT), MULTI BANK PRECHARGE
(MPRE) and BACKGROUND REFRESH (BREF), are not required.
DS05-11463-1E
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