MB81EDS516545 Datasheet, PDF (31/60 Pages) Fujitsu Component Limited. – MEMORY Consumer FCRAM CMOS 512M Bit (4 bank x 2M word x 64 bit) Consumer Applications Specific Memory for SiP

MB81EDS516545
■ ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Rating
Unit
Supply Voltage Relative to VSS
VDD,VDDQ
-0.5 to +2.3
V
Input / Output Voltage Relative to VSS
VIN, VOUT
-0.5 to +2.3
V
Short Circuit Output Current
IOUT
±50
mA
Power Dissipation
PD
1.0
W
Storage Temperature
TSTG
-55 to +125
°C
WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current,
temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings.
■ RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Min.
Typ.
Max.
Unit
Supply Voltage^*1
VDD, VDDQ
1.7
1.8
1.9
V
VSS, VSSQ
0
0
0
V
DC Input High Voltage^*2
VIH (DC)
VDDQ × 0.7
⎯
VDDQ + 0.3
V
AC Input High Voltage^*2
VIH (AC)
VDDQ × 0.8
⎯
VDDQ + 0.3
V
DC Input Low Voltage^*3
VIL (DC)
-0.3
⎯
VDDQ × 0.3
V
AC Input Low Voltage^*3
VIL (AC)
-0.3
⎯
VDDQ × 0.2
V
Junction Temperature
Tj
-10
⎯
+125
°C
*1: VDDQ must be less than or equal to VDD.
*2: Maximum DC voltage on input or I/O pins is VDDQ + 0.3 V. During voltage transitions, inputs may positive
overshoot to VDDQ + 1.0V for periods of up to 3 ns.
*3: Minimum DC voltage on input or I/O pins is -0.3 V. During voltage transitions, inputs may negative overshoot
to VSSQ - 1.0V for periods of up to 3 ns.
WARNING: The recommended operating conditions are required in order to ensure the normal operation of
the semiconductor device. All of the device's electrical characteristics are warranted when the
device is operated within these ranges.
Always use semiconductor devices within their recommended operating condition ranges.
Operation outside these ranges may adversely affect reliability and could result in device failure.
No warranty is made with respect to uses, operating conditions, or combinations not represented
on the data sheet. Users considering application outside the listed conditions are advised to contact
their representatives beforehand.
■ CAPACITANCE
Parameter
Input Capacitance, Except for WDQS, DM
Input Capacitance for WDQS, DM
I/O Capacitance
Symbol
CIN1
CIN2
CI/O
Min.
1
2
2
Typ.
⎯
⎯
⎯
(Ta = + 25 °C, f = 1 MHz)
Max.
Unit
2.5
pF
4
pF
4
pF
DS05-11463-1E
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